The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Jan. 23, 2013
Applicant:

Elpida Memory, Inc., Tokyo, JP;

Inventor:

Toshiyuki Hirota, Tokyo, JP;

Assignee:

PS4 Luxco S.A.R.L., Luxembourg, LU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01G 4/002 (2006.01); H01L 49/02 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 27/10852 (2013.01); H01L 27/0207 (2013.01); H01L 27/10817 (2013.01); H01L 28/91 (2013.01);
Abstract

This semiconductor device according to the present invention includes a plurality of cylindrical lower electrodes aligned densely in a memory array region; a plate-like support which is contacted on the side surface of the cylindrical lower electrodes, and links to support the plurality of the cylindrical lower electrodes; a pore portion provided in the plate-like support; a dielectric film covering the entire surface of the cylindrical lower electrodes and the plate-like support in which the pore portion is formed; and an upper electrode formed on the surface of the dielectric film, wherein the boundary length of the part on the side surface of the cylindrical lower electrode which is exposed on the pore portion is shorter than the boundary length of the part on the side surface of the cylindrical lower electrode which is not exposed on the pore portion.


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