The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Mar. 28, 2013
Applicant:

High Power Opto. Inc., Taichung, TW;

Inventors:

Wei-Yu Yen, Taichung, TW;

Li-Ping Chou, Taichung, TW;

Fu-Bang Chen, Taichung, TW;

Chih-Sung Chang, Taichung, TW;

Assignee:

High Power Opto. Inc., Taichung, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/0079 (2013.01); H01L 33/46 (2013.01);
Abstract

A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a buffer layer, a light-emitting layer, a first-conductivity semiconductor layer, a first light reflecting layer, a protective structure, and an adhesive layer. The first-conductivity semiconductor layer is disposed between the buffer layer and a first side of the light-emitting layer. The first light reflecting layer is disposed between the first-conductivity semiconductor layer and the buffer layer. The protective structure is disposed between the first reflecting layer and the buffer layer. The adhesive layer is disposed between the first-conductivity semiconductor layer and the protective structure.


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