The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Apr. 29, 2011
Applicants:

Werner Bergbauer, Windberg, DE;

Lutz Höppel, Alteglofsheim, DE;

Philipp Drechsel, Mintraching, DE;

Christopher Kölper, Regensburg, DE;

Martin Straβburg, Donaustauf, DE;

Patrick Rode, Regensburg, DE;

Inventors:

Werner Bergbauer, Windberg, DE;

Lutz Höppel, Alteglofsheim, DE;

Philipp Drechsel, Mintraching, DE;

Christopher Kölper, Regensburg, DE;

Martin Straβburg, Donaustauf, DE;

Patrick Rode, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/18 (2006.01); H01L 31/0236 (2006.01); H01L 33/02 (2010.01); H01L 33/22 (2010.01); H01L 31/0232 (2014.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 31/18 (2013.01); H01L 31/02363 (2013.01); H01L 33/12 (2013.01); H01L 31/02 (2013.01); H01L 33/22 (2013.01); H01L 33/0079 (2013.01); H01L 33/24 (2013.01); Y02E 10/50 (2013.01); H01L 31/02327 (2013.01);
Abstract

An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure.


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