The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jun. 02, 2011
Applicant:
Mineo Miura, Kyoto, JP;
Inventor:
Mineo Miura, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H03K 17/687 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 23/62 (2006.01); H03K 17/082 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/6874 (2013.01); H01L 2224/48091 (2013.01); H01L 29/45 (2013.01); H01L 29/7815 (2013.01); H01L 2924/0105 (2013.01); H01L 2224/4903 (2013.01); H01L 2924/04941 (2013.01); H01L 23/62 (2013.01); H01L 29/7813 (2013.01); H01L 2224/48137 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01013 (2013.01); H01L 2224/49111 (2013.01); H01L 29/7802 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/10272 (2013.01); H01L 25/0655 (2013.01); H03K 17/0822 (2013.01); H03K 2217/0009 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/8592 (2013.01); H01L 29/1608 (2013.01); H01L 24/48 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/13091 (2013.01); H01L 24/49 (2013.01);
Abstract
An AC switch includes a first compound semiconductor MOSFET and a second compound semiconductor MOSFET whose sources are connected with each other, a first output terminal connected to the drain of the first compound semiconductor MOSFET, and a second output terminal connected to the drain of the second compound semiconductor MOSFET. The withstand voltage between the first output terminal and the second output terminal in an off state is not less than 400 V. The resistance between the first output terminal and the second output terminal in an on state is not more than 20 mΩ.