The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
May. 06, 2011
Sachiaki Tezuka, Atsugi, JP;
Yasuhiro Jinbo, Atsugi, JP;
Toshinari Sasaki, Tochigi, JP;
Hidekazu Miyairi, Atsugi, JP;
Yosuke Kanzaki, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Sachiaki Tezuka, Atsugi, JP;
Yasuhiro Jinbo, Atsugi, JP;
Toshinari Sasaki, Tochigi, JP;
Hidekazu Miyairi, Atsugi, JP;
Yosuke Kanzaki, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Abstract
A manufacturing method of a microcrystalline silicon film includes the steps of forming a first microcrystalline silicon film over an insulating film by a plasma CVD method under a first condition; and forming a second microcrystalline silicon film over the first microcrystalline silicon film under a second condition. As a source gas supplied to a treatment chamber, a deposition gas containing silicon and a gas containing hydrogen are used. In the first condition, a flow rate of hydrogen is set at a flow rate 50 to 1000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 67 to 1333 Pa inclusive. In the second condition, a flow rate of hydrogen is set at a flow rate 100 to 2000 times inclusive that of the deposition gas, and the pressure inside the treatment chamber is set 1333 to 13332 Pa inclusive.