The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Aug. 10, 2010
Applicants:
Takeshi Hama, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Fumihiko Mochizuki, Kanagawa, JP;
Inventors:
Takeshi Hama, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Fumihiko Mochizuki, Kanagawa, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/786 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 27/3262 (2013.01); H01L 2251/5338 (2013.01); H01L 27/3248 (2013.01);
Abstract
There is provided an amorphous oxide semiconductor material including an amorphous oxide semiconductor including In, Ga and Zn, wherein when In:Ga:Zn=a:b:c denotes an element composition ratio of the oxide semiconductor, the element composition ratio is defined by the range of a+b=2 and b<2 and c<4b−3.2 and c>−5b+8 and 1≦c≦2.