The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jul. 23, 2012
Applicants:
Jong Sun Maeng, Gwangju, KR;
Bum Joon Kim, Seoul, KR;
Ki Sung Kim, Gyeonggi-do, KR;
Suk Ho Yoon, Seoul, KR;
Sung Tae Kim, Seoul, KR;
Inventors:
Jong Sun Maeng, Gwangju, KR;
Bum Joon Kim, Seoul, KR;
Ki Sung Kim, Gyeonggi-do, KR;
Suk Ho Yoon, Seoul, KR;
Sung Tae Kim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 33/12 (2013.01); H01L 33/02 (2013.01);
Abstract
A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlGaN (0.01≦x≦0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.