The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jun. 13, 2012
Sang Ho Park, Suwon-si, KR;
Young Ki Shin, Seoul, KR;
Yoon Ho Khang, Yongin-si, KR;
Joo Hyung Lee, Seoul, KR;
Hyung Woo Lee, Anyang-si, KR;
Seung Hun Hong, Seoul, KR;
Sang Ho Park, Suwon-si, KR;
Young Ki Shin, Seoul, KR;
Yoon Ho Khang, Yongin-si, KR;
Joo Hyung Lee, Seoul, KR;
Hyung Woo Lee, Anyang-si, KR;
Seung Hun Hong, Seoul, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
SNU R&DB Foundation, Seoul, KR;
Abstract
A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.