The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jul. 12, 2013
Applicant:
California Institute of Technology, Pasadena, CA (US);
Inventors:
Chieh-Feng Chang, Pasadena, CA (US);
Aditya Rajagopal, Irvine, CA (US);
Axel Scherer, Barnard, VT (US);
Assignee:
California Institute of Technology, Pasadena, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 29/4232 (2013.01); H01L 29/0673 (2013.01);
Abstract
Methods for fabrication of nanopillar field effect transistors are described. These transistors can have high height-to-width aspect ratios and be CMOS compatible. Silicon nitride may be used as a masking material. These transistors have a variety of applications, for example they can be used for molecular sensing if the nanopillar has a functionalized layer contacted to the gate electrode. The functional layer can bind molecules, causing an electrical signal in the transistor.