The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Feb. 28, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Wakana Kai, Yokohama, JP;

Tomonori Aoyama, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H05B 6/80 (2006.01); H01L 21/306 (2006.01); H05B 6/64 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H05B 6/80 (2013.01); H05B 6/6473 (2013.01);
Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a concave portion on a surface of a substrate to be processed. The method further includes forming a coating film on the substrate to embed the coating film in the concave portion. The method further includes performing a first heat treatment in an atmosphere including an oxidant which contains polar molecules. The method further includes performing a second heat treatment after the first heat treatment by irradiating the coating film with a microwave after or while exposing the coating film to a liquid or a gas containing polar molecules.


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