The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jul. 19, 2012
Applicant:
Kazuhiro Nojima, Chuo-ku, JP;
Inventor:
Kazuhiro Nojima, Chuo-ku, JP;
Assignee:
PS4 Luxco S.a.r.l., Luxembourg, LU;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/108 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10876 (2013.01); H01L 21/823487 (2013.01);
Abstract
A semiconductor pillar which has a first conductivity type and protrudes from a semiconductor substrate, is formed. A bottom diffusion layer having a second conductivity type is formed in the semiconductor substrate around a bottom of the semiconductor pillar. A gate insulator film which covers a side surface of the semiconductor pillar, is formed. A gate electrode which covers the gate insulator film, is formed. A top diffusion layer having the second conductivity type is formed at a top portion of the semiconductor pillar. The top diffusion layer including a semiconductor body is formed by an epitaxial growth which contains an impurity.