The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jun. 11, 2013
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Honda Patents & Technologies North America, Llc, Raymond, OH (US);
Timothy P. Holme, Menlo Park, CA (US);
Andrei Iancu, Stanford, CA (US);
Hee Joon Jung, Palo Alto, CA (US);
Michael C Langston, Los Altos Hills, CA (US);
Munekazu Motoyama, Kumamoto, JP;
Friedrich B. Prinz, Woodside, CA (US);
Takane Usui, Palo Alto, CA (US);
Hitoshi Iwadate, Palo Alto, CA (US);
Neil Dasgupta, San Francisco, CA (US);
Cheng-Chieh Chao, Mountain View, CA (US);
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Honda Patents & Technologies North America, LLC, Raymond, OH (US);
Abstract
A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.