The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Apr. 30, 2009
Applicants:

Zhifeng Ren, Newton, MA (US);

Jian Yang, Brookline, MA (US);

Xiao Yan, Brighton, MA (US);

Qinyu He, Guangzhou, CN;

Gang Chen, Carlisle, MA (US);

Qing Hao, Cambridge, MA (US);

Inventors:

Zhifeng Ren, Newton, MA (US);

Jian Yang, Brookline, MA (US);

Xiao Yan, Brighton, MA (US);

Qinyu He, Guangzhou, CN;

Gang Chen, Carlisle, MA (US);

Qing Hao, Cambridge, MA (US);

Assignees:

Massachusetts Institute of Technology, Cambridge, MA (US);

Trustees of Boston College, Chestnut Hill, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01B 1/02 (2006.01); H01L 35/34 (2006.01); H01L 35/12 (2006.01); C22C 1/04 (2006.01); B22F 1/00 (2006.01); B22F 3/00 (2006.01); C22C 1/00 (2006.01); C22C 5/00 (2006.01); B22F 9/00 (2006.01); B22F 1/02 (2006.01); C22C 1/05 (2006.01); H01L 35/18 (2006.01); B82Y 30/00 (2011.01); C01G 49/00 (2006.01); C01G 51/00 (2006.01); C01G 53/00 (2006.01); H01L 35/26 (2006.01);
U.S. Cl.
CPC ...
H01L 35/18 (2013.01); B82Y 30/00 (2013.01); C01G 49/009 (2013.01); C01G 51/006 (2013.01); C01G 53/006 (2013.01); C22C 1/0433 (2013.01); C22C 1/0466 (2013.01); H01L 35/26 (2013.01); B22F 2998/10 (2013.01); B22F 2999/00 (2013.01); C01P 2002/52 (2013.01); C01P 2002/54 (2013.01); C01P 2002/72 (2013.01); C01P 2002/77 (2013.01); C01P 2002/88 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01); C01P 2004/64 (2013.01); C01P 2006/10 (2013.01); C01P 2006/40 (2013.01); Y10S 977/773 (2013.01);
Abstract

Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.


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