The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Aug. 16, 2010
Mamiko Kanamaru, Hitachi, JP;
Tomokazu Shimada, Hitachi, JP;
Takashi Shinoda, Hitachi, JP;
Hitachi Chemical Company, Ltd., Tokyo, JP;
Abstract
The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nmor less and the biaxial average primary particle diameter when arbitrary 20 silica particles are selected from an image obtained by scanning electron microscope observation is 25 to 55 nm. The association degree of the silica particles is 1.1 or more. The CMP polishing liquid has the high barrier film polishing speed, the favorable abrasive grain dispersion stability, and the high interlayer dielectric polishing speed. The CMP polishing liquid can provide a method of producing semiconductor substrates or the like, that have excellent microfabrication, thin film formation, dimension accuracy, electric property and high reliability with low cost.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile