The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Mar. 12, 2013
Applicant:

Western Digital (Fremont), Llc, Fremont, CA (US);

Inventors:

Zhihong Zhang, Fremont, CA (US);

Guanxiong Li, Fremont, CA (US);

Ming Mao, Dublin, CA (US);

Assignee:

Western Digital (Fremont), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); G11B 5/39 (2006.01); H01L 43/12 (2006.01); G11B 5/31 (2006.01); G11B 5/127 (2006.01);
U.S. Cl.
CPC ...
G11B 5/127 (2013.01); G11B 5/3906 (2013.01); G11B 5/3903 (2013.01); H01L 43/12 (2013.01); G11B 5/313 (2013.01); G11B 5/314 (2013.01);
Abstract

A method and system provide a substantially seamless interface in a magnetic transducer. The magnetic recording transducer includes a first layer and a second layer on the first layer. The second layer is different from the first layer. The first layer consists of at least one material. The method includes removing at least the second layer using a first removal process. A residue of the second layer and a first portion of the first layer remain after the first removal process. A first sacrificial layer consists of the at least one material on the first portion of the first layer. At least the first sacrificial layer is removed using a second removal process. A second portion of the first layer remains after completion of the second removal process. An additional structure is provided. The seamless interface is between the second portion of the first layer and the additional structure.


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