The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Oct. 05, 2007
Applicants:

Masataka Yahagi, Ibaraki, JP;

Hideyuki Takahashi, Ibaraki, JP;

Hirohisa Ajima, Ibaraki, JP;

Inventors:

Masataka Yahagi, Ibaraki, JP;

Hideyuki Takahashi, Ibaraki, JP;

Hirohisa Ajima, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); C25B 9/00 (2006.01); C25B 11/00 (2006.01); C25B 13/00 (2006.01); B22F 1/00 (2006.01); B22F 3/00 (2006.01); C22C 1/00 (2006.01); C22C 1/04 (2006.01); C22C 12/00 (2006.01); C22C 28/00 (2006.01); C22C 1/05 (2006.01); C23C 14/34 (2006.01); C23C 14/06 (2006.01); G11B 7/26 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3414 (2013.01); C22C 28/00 (2013.01); C22C 1/05 (2013.01); B22F 2998/10 (2013.01); C23C 14/0623 (2013.01); C22C 12/00 (2013.01); G11B 7/266 (2013.01);
Abstract

Provided is an Sb—Te base alloy sinter sputtering target having Sb and Te as its primary component and comprising a structure in which Sb—Te base alloy particles are surrounded by fine carbon or boron particles; wherein, if the mean diameter of the Sb—Te base alloy particles is X and the particle size of carbon or boron is Y, Y/X is within the range of 1/10 to 1/10000. The present invention seeks to improve the Sb—Te base alloy sputtering target structure, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing during the sputtering process.


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