The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Jan. 10, 2011
Hisayuki Miki, Ichihara, JP;
Kenzo Hanawa, Ichihara, JP;
Yasunori Yokoyama, Ichihara, JP;
Yasumasa Sasaki, Ichihara, JP;
Hisayuki Miki, Ichihara, JP;
Kenzo Hanawa, Ichihara, JP;
Yasunori Yokoyama, Ichihara, JP;
Yasumasa Sasaki, Ichihara, JP;
Toyoda Gosei Co., Ltd., Aichi, JP;
Abstract
A sputtering apparatus () includes: a chamber () having an inside maintained in a depressurized state to generate plasma discharge (); a cathode () placed in the chamber () and holding a target (); and a substrate holder () holding a substrate () so that one surface of the substrate () faces the surface of the target (). The substrate () is arranged at an upper portion in the sputtering apparatus () with the surface of the substrate () facing downward. The target () is arranged at a lower portion in the sputtering apparatus () with the surface of the target () facing upward. The sputtering apparatus () includes a heater () for heating the substrate (). The temperature of the substrate () is raised by absorbing electromagnetic waves radiated from the heater (). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.