The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
May. 02, 2005
Applicant:
Hans Von Kaenel, Zürich, CH;
Inventor:
Hans Von Kaenel, Zürich, CH;
Assignee:
Dichroic Cell S.R.L., Padua, IT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/00 (2006.01); C30B 29/42 (2006.01); C23C 16/56 (2006.01); C23C 16/02 (2006.01); H01L 21/02 (2006.01); H01L 31/0392 (2006.01); H01L 31/0304 (2006.01); C23C 16/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0262 (2013.01); Y02E 10/544 (2013.01); C23C 16/56 (2013.01); C23C 16/0272 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/10329 (2013.01); H01L 21/02433 (2013.01); H01L 21/02381 (2013.01); H01L 21/02505 (2013.01); H01L 31/0392 (2013.01); H01L 21/02463 (2013.01); H01L 21/0245 (2013.01); H01L 21/02546 (2013.01); H01L 31/0304 (2013.01); C23C 16/0209 (2013.01); C23C 16/28 (2013.01);
Abstract
Relaxed germanium buffer layers can be grown economically on misoriented silicon wafers by low-energy plasma-enhanced chemical vapor deposition. In conjunction with thermal annealing and/or patterning, the buffer layers can serve as high-quality virtual substrates for the growth of crack-free GaAs layers suitable for high-efficiency solar cells, lasers and field effect transistors.