The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Dec. 21, 2012
Qualcomm Incorporated, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Methods and apparatus for Enhanced Static IR Drop Analysis are provided. Enhanced Static IR Drop Analysis can be used to determine a quality and robustness of a power distribution network in a circuit. In examples, Enhanced Static IR Drop Analysis includes recording time points at which global current demand profile peaks, sampling instantaneous current from individual tile-based current demand profiles at each time point, and running Static IR Analysis for the tiles at the time points to determine tile current use by the tiles during the time points. Enhanced Static IR Drop Analysis can be used for quick assessment of peak current distribution and determining how the peak current distribution stresses the power distribution network. Enhanced Static IR Drop Analysis is useful during earlier stages of circuit design, when quickly producing circuit performance data is imperative and conventional techniques require significant resources.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile