The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Aug. 11, 2010
Applicant:
Johannes Bernhard Koeth, Gerbrunn, DE;
Inventor:
Johannes Bernhard Koeth, Gerbrunn, DE;
Assignee:
nanoplus GmbH Nanosystems and Technologies, Gerbrunn, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/028 (2006.01); G01N 21/39 (2006.01); H01S 5/20 (2006.01); H01S 5/026 (2006.01);
U.S. Cl.
CPC ...
H01S 5/028 (2013.01); H01S 5/005 (2013.01); H01S 5/0014 (2013.01); H01S 5/0287 (2013.01); G01N 21/39 (2013.01); H01S 5/2022 (2013.01); H01S 5/026 (2013.01);
Abstract
The invention relates to a semiconductor laser having at least one semiconductor substrate (), at least one active layer () arranged on the semiconductor substrate () which generates radiation in a wavelength region, at least one laser mirror () which is applied at one end of the active layer () perpendicular thereto, through which a part of the radiation generated in the active layer () emerges, and which is provided with a layer of absorbing material () said layer being suitable for reducing a gradient of the luminous-power/current characteristic for radiation emerging through the laser mirror ().