The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Oct. 28, 2011
Applicants:

Luke J. Mawst, Sun Prairie, WI (US);

Jeremy D. Kirch, Middleton, WI (US);

Thomas F. Kuech, Madison, WI (US);

Inventors:

Luke J. Mawst, Sun Prairie, WI (US);

Jeremy D. Kirch, Middleton, WI (US);

Thomas F. Kuech, Madison, WI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01L 21/02 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02505 (2013.01); H01L 21/0251 (2013.01); H01S 2304/04 (2013.01); H01L 21/02466 (2013.01); H01L 21/02395 (2013.01); H01S 5/3402 (2013.01); H01L 21/02461 (2013.01); H01L 21/0262 (2013.01); H01L 21/02546 (2013.01); H01L 21/02463 (2013.01); H01S 5/3403 (2013.01);
Abstract

Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over the substrate, and a quantum cascade structure including a superlattice of quantum wells and barriers over the metamorphic buffer layer structure. The substrate may be GaAs and the quantum cascade structure may be an InGaAs/InAlAs superlattice, including one or more barriers of AlAs.


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