The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Mar. 20, 2012
Eiji Kitagawa, Yokohama, JP;
Naoharu Shimomura, Tokyo, JP;
Hiroaki Yoda, Seongnam-Si, KR;
Junichi Ito, Yokohama, JP;
Minoru Amano, Sagamihara, JP;
Chikayoshi Kamata, Kawasaki, JP;
Keiko Abe, Yokohama, JP;
Eiji Kitagawa, Yokohama, JP;
Naoharu Shimomura, Tokyo, JP;
Hiroaki Yoda, Seongnam-Si, KR;
Junichi Ito, Yokohama, JP;
Minoru Amano, Sagamihara, JP;
Chikayoshi Kamata, Kawasaki, JP;
Keiko Abe, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.