The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Apr. 22, 2010
Jianhua Yang, Palo Alto, CA (US);
Wei Wu, Palo Alto, CA (US);
Qiangfei Xia, Palo Alto, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
Various embodiments of the present invention are directed to nanoscale electronic devices that provide nonvolatile memristive switching. In one aspect, a two-terminal device () comprises a first electrode (), a second electrode (), and an active region () disposed between the first electrode and the second electrode. The active region includes a mobile dopant (), and a fast drift ionic species (). The fast drift ionic species drifts into a diode-like electrode/active region interface temporarily increasing conductance across the interface when a write voltage is applied to the two-terminal device to switch the device conductance.