The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Jan. 26, 2009
Applicants:

Nathaniel J. Quitoriano, Pacifica, CA (US);

Douglas Ohlberg, Mountain View, CA (US);

Philip J. Kuekes, Menlo Park, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Inventors:

Nathaniel J. Quitoriano, Pacifica, CA (US);

Douglas Ohlberg, Mountain View, CA (US);

Philip J. Kuekes, Menlo Park, CA (US);

Jianhua Yang, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/00 (2006.01); H01L 21/20 (2006.01); G11C 11/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/102 (2006.01); B82Y 10/00 (2011.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1021 (2013.01); H01L 27/2463 (2013.01); H01L 21/26506 (2013.01); H01L 45/142 (2013.01); H01L 45/146 (2013.01); H01L 45/14 (2013.01); H01L 45/147 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/149 (2013.01); H01L 45/148 (2013.01); B82Y 10/00 (2013.01); Y10S 977/762 (2013.01);
Abstract

Various embodiments of the present invention are direct to nanoscale, reconfigurable, memristor devices. In one aspect, a memristor device comprises an electrode () and an alloy electrode (). The device also includes an active region () sandwiched between the electrode and the alloy electrode. The alloy electrode forms dopants in a sub-region of the active region adjacent to the alloy electrode. The active region can be operated by selectively positioning the dopants within the active region to control the flow of charge carriers between the electrode and the alloy electrode.


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