The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Dec. 28, 2012
Industrial Technology Research Institute, Hsinchu, TW;
Cheng-Tyng Yen, Kaohsiung, TW;
Young-Shying Chen, Hsinchu, TW;
Chien-Chung Hung, Hsinchu, TW;
Chwan-Ying Lee, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A Schottky barrier device includes a semiconductor substrate, a first contact metal layer, a second contact metal layer and an insulating layer. The semiconductor substrate has a first surface, and plural trenches are formed on the first surface. Each trench includes a first recess having a first depth and a second recess having a second depth. The second recess extends down from the first surface while the first recess extends down from the second recess. The first contact metal layer is formed on the second recess. The second contact metal layer is formed on the first surface between two adjacent trenches. The insulating layer is formed on the first recess. A first Schottky barrier formed between the first contact metal layer and the semiconductor substrate is larger than a second Schottky barrier formed between the second contact metal layer and the semiconductor substrate.