The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jan. 30, 2014
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tohoku University, Sendai, JP;
Yushi Kato, Tokyo, JP;
Tadaomi Daibou, Tokyo, JP;
Eiji Kitagawa, Tokyo, JP;
Takao Ochiai, Tokyo, JP;
Takahide Kubota, Sendai, JP;
Shigemi Mizukami, Sendai, JP;
Terunobu Miyazaki, Sendai, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tohoku University, Sendai-shi, JP;
Abstract
The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnGe(77 atm %≦x≦82 atm %, 18 atm %≦y≦23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.