The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Aug. 16, 2011
Tadaomi Daibou, Yokohama, JP;
Minoru Amano, Sagamihara, JP;
Daisuke Saida, Tokyo, JP;
Junichi Ito, Yokohama, JP;
Yuichi Ohsawa, Yokohama, JP;
Chikayoshi Kamata, Kawasaki, JP;
Saori Kashiwada, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Tadaomi Daibou, Yokohama, JP;
Minoru Amano, Sagamihara, JP;
Daisuke Saida, Tokyo, JP;
Junichi Ito, Yokohama, JP;
Yuichi Ohsawa, Yokohama, JP;
Chikayoshi Kamata, Kawasaki, JP;
Saori Kashiwada, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.