The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Dec. 11, 2013
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Soo-Hun Hong, Gunpo-Si, KR;
Hee-Soo Kang, Seoul, KR;
Hyun-Jo Kim, Seoul, KP;
Sang-Pil Sim, Seongnam-Si, KR;
Hee-Don Jung, Hwaseong-Si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a substrate having first, second and third fins longitudinally aligned in a first direction. A first trench extends between the first and second fins, and a second trench extends between the second and third fins. A first portion of field insulating material is disposed in the first trench, and a second portion of field insulating material is disposed in the second trench. An upper surface of the second portion of the field insulating material is recessed in the second trench at a level below uppermost surfaces of the second and third fins. A first dummy gate is disposed on an upper surface of the first portion of the field insulating material, and a second dummy gate at least partially extends into the second trench to the upper surface of the second portion of the field insulating material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile