The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Feb. 24, 2005
Applicant:
Koji Miyata, Mahopac, NY (US);
Inventor:
Koji Miyata, Mahopac, NY (US);
Assignees:
Sony Corporation, Tokyo, JP;
Sony Electronics Inc., Park Ridge, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/823475 (2013.01); H01L 21/76895 (2013.01); H01L 29/78 (2013.01); H01L 21/823871 (2013.01); Y10S 257/903 (2013.01);
Abstract
In one aspect, the present invention provides electronic devices that comprise a doped semiconductor shared contact between (a) a gate conductor region of at least one transistor and (b) a source/drain diffusion region of at least one transistor. One specific example of such as shared contact, among many others, is a doped SiGe shared contact between (a) a gate conductor region shared by an N-channel MOSFET and a P-channel MOSFET and (b) a drain diffusion region of an N-channel MOSFET or of a P-channel MOSFET.