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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8878294 B1

PDFFull Text
Date of Patent:
Nov. 04, 2014

Filed:

Jul. 13, 2013

Semiconductor device having a drain-gate isolation portion

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Mitsuo Kojima, Kyoto, JP;

Shoji Takei, Kyoto, JP;

Assignee:

Rohm Co., Ltd., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Tucker Wright

Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/823814 (2013.01); H01L 21/82385 (2013.01); H01L 21/823857 (2013.01); H01L 21/823892 (2013.01); H01L 27/0922 (2013.01); H01L 27/0928 (2013.01); H01L 29/0847 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01); H01L 27/088 (2013.01); H01L 29/0653 (2013.01); H01L 29/1045 (2013.01); H01L 29/7833 (2013.01);
Abstract

An inventive semiconductor device includes a semiconductor layer, a source region provided in a surface layer portion of the semiconductor layer, a drain region provided in the surface of the semiconductor layer in spaced relation from the source region, a gate insulation film provided in opposed relation to a portion of the surface of the semiconductor layer present between the source region and the drain region, a gate electrode provided on the gate insulation film, and a drain-gate isolation portion provided between the drain region and the gate insulation film for isolating the drain region and the gate insulation film from each other in non-contact relation.

Find Patent Forward Citations

Kojima, Mitsuo. (2014). Semiconductor device having a drain-gate isolation portion (U.S. Patent No. 8878294). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8878294

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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