The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Apr. 30, 2012
Sameer Pendharkar, Allen, TX (US);
Suhail Murtaza, Plano, TX (US);
Juergen Wittmann, Wannweil, DE;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A protection circuit for a DMOS transistor comprises an anode circuit having a first heavily doped region of a first conductivity type () formed within and electrically connected to a first lightly doped region of the second conductivity type (). A cathode circuit having a plurality of third heavily doped regions of the first conductivity type () within a second heavily doped region of the second conductivity type (). A first lead () is connected to each third heavily doped region () and connected to the second heavily doped region by at least three spaced apart connections () between every two third heavily doped regions. An SCR () is connected between the anode circuit and the cathode circuit. The DMOS transistor has a drain () connected to the anode circuit and a source () connected to the cathode circuit.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile