The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
May. 08, 2013
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Akira Ohtani, Ebina, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0688 (2013.01); H01L 29/7834 (2013.01); H01L 21/26586 (2013.01); H01L 29/66659 (2013.01); H01L 21/266 (2013.01);
Abstract
A semiconductor device comprising a MOS transistor provided in a semiconductor region, wherein a source region and a drain region of the MOS transistor have a first conductivity type, the source region includes a first region including an upper portion of a boundary portion between the source region and a channel region of the MOS transistor, and a second region including an lower portion of the boundary portion, and the first region contains an impurity having a second conductivity type different from the first conductivity type, in an amount larger than that in the second region.