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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8878259 B1

PDFFull Text
Date of Patent:
Nov. 04, 2014

Filed:

Jul. 23, 2012

Super lattice/quantum well nanowires

Applicants:

Harold J. Hovel, Katonah, NY (US);

Qiang Huang, Sleepy Hollow, NY (US);

Xiaoyan Shao, Yorktown Heights, NY (US);

James Vichiconti, Carmel, NY (US);

George F. Walker, New York, NY (US);

Inventors:

Harold J. Hovel, Katonah, NY (US);

Qiang Huang, Sleepy Hollow, NY (US);

Xiaoyan Shao, Yorktown Heights, NY (US);

James Vichiconti, Carmel, NY (US);

George F. Walker, New York, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Novak Druce Connolly Bove + Quigg LLP

Louis J. Percello, Esq.

Primary Examiner:

Zandra Smith

Assistant Examiner:

Khanh Duong

Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/76 (2006.01); H01L 31/119 (2006.01); H01L 31/113 (2006.01); H01L 31/062 (2012.01); H01L 31/18 (2006.01); B82Y 10/00 (2011.01); B82Y 30/00 (2011.01); C30B 29/02 (2006.01); C30B 29/06 (2006.01); C30B 29/40 (2006.01); C30B 29/52 (2006.01); C30B 29/60 (2006.01); C30B 33/10 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 29/12 (2006.01); H01L 31/0352 (2006.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); C30B 29/02 (2013.01); C30B 29/06 (2013.01); C30B 29/40 (2013.01); C30B 29/52 (2013.01); C30B 29/60 (2013.01); C30B 29/605 (2013.01); C30B 33/10 (2013.01); H01L 21/30604 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/0676 (2013.01); H01L 29/068 (2013.01); H01L 29/125 (2013.01); H01L 31/0352 (2013.01); H01L 33/20 (2013.01);
Abstract

Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.

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