The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Oct. 17, 2012
Seoul National University R&db Foundation, Seoul, KR;
Kyungpook National University Industry-academic Cooperation Foundation, Daegu, KR;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Seoul National University R&DB Foundation, Seoul, KR;
Kyungpook National University Industry-academic Cooperation Foundation, Daegu, KR;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Abstract
The present invention provides a silicon-compatible compound junctionless field effect transistor enabled to be compatible to a bulk silicon substrate for substituting an expensive SOI substrate, to form a blocking semiconductor layer between a silicon substrate and an active layer by a semiconductor material having a specific difference of energy bandgap from that of the active layer to substitute a prior buried oxide for blocking a leakage current at an off-operation time and to form the active layer by a semiconductor layer having electron or hole mobility higher than that of silicon, and to operate perfectly as a junctionless device though the dopant concentration of the active layer is much lower than the prior junctionless device.