The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Oct. 26, 2011
Applicants:
Sung-jin an, Gyeongbuk, KR;
Dong-gun Lee, Gyeongbuk, KR;
Seok-han Kim, Daegu, KR;
Inventors:
Assignee:
LG Siltron Inc., Gyeongsankbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 21/02 (2006.01); H01L 33/12 (2010.01); H01L 21/36 (2006.01); H01L 29/06 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/02 (2013.01); H01L 21/0237 (2013.01); H01L 21/02439 (2013.01); H01L 21/02444 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/0254 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 21/36 (2013.01); H01L 21/02499 (2013.01); H01L 21/02104 (2013.01); H01L 29/06 (2013.01); B82Y 40/00 (2013.01); Y10S 977/734 (2013.01);
Abstract
Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.