The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Aug. 15, 2011
Applicants:

Jeong Hee Yang, Ansan-si, KR;

Kyoung Wan Kim, Ansan-si, KR;

Yeo Jin Yoon, Ansan-si, KR;

YE Seul Kim, Ansan-si, KR;

Sang Hyun OH, Ansan-si, KR;

Duk IL Suh, Ansan-si, KR;

Keum Ju Lee, Ansan-si, KR;

Jin Woong Lee, Ansan-si, KR;

Da Yeon Jeong, Ansan-si, KR;

Inventors:

Jeong Hee Yang, Ansan-si, KR;

Kyoung Wan Kim, Ansan-si, KR;

Yeo Jin Yoon, Ansan-si, KR;

Ye Seul Kim, Ansan-si, KR;

Sang Hyun Oh, Ansan-si, KR;

Duk Il Suh, Ansan-si, KR;

Keum Ju Lee, Ansan-si, KR;

Jin Woong Lee, Ansan-si, KR;

Da Yeon Jeong, Ansan-si, KR;

Assignee:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/20 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/20 (2013.01); H01L 2933/0091 (2013.01); H01L 33/42 (2013.01);
Abstract

Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.


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