The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jul. 23, 2012
Applicants:
Mariko Suzuki, Kanagawa, JP;
Tadashi Sakai, Kanagawa, JP;
Naoshi Sakuma, Kanagawa, JP;
Masayuki Katagiri, Kanagawa, JP;
Yuichi Yamazaki, Tokyo, JP;
Inventors:
Mariko Suzuki, Kanagawa, JP;
Tadashi Sakai, Kanagawa, JP;
Naoshi Sakuma, Kanagawa, JP;
Masayuki Katagiri, Kanagawa, JP;
Yuichi Yamazaki, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 21/02 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02527 (2013.01); H01L 29/66143 (2013.01); H01L 29/872 (2013.01); H01L 29/66136 (2013.01); H01L 21/02576 (2013.01); H01L 29/8613 (2013.01); H01L 21/02433 (2013.01); H01L 21/02376 (2013.01);
Abstract
A semiconductor device according to the present embodiment includes a diamond substrate having a surface plane inclined from a (100) plane in a range of 10 degrees to 40 degrees in a direction of <011>±10 degrees, and an n-type diamond semiconductor layer containing phosphorus (P) and formed above the surface plane described above.