The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Mar. 25, 2010
Ryuichi Toba, Chiyoda-ku, JP;
Masahito Miyashita, Chiyoda-ku, JP;
Tatsunori Toyota, Chiyoda-ku, JP;
Yoshitaka Kadowaki, Chiyoda-ku, JP;
Ryuichi Toba, Chiyoda-ku, JP;
Masahito Miyashita, Chiyoda-ku, JP;
Tatsunori Toyota, Chiyoda-ku, JP;
Yoshitaka Kadowaki, Chiyoda-ku, JP;
Dowa Holdings Co., Ltd., Tokyo, JP;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050° C. or less, but also with AlGaN having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.