The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Dec. 13, 2011
Vikram Arvind Patil, Hoboken, NJ (US);
Eui-hyeok Yang, Fort Lee, NJ (US);
Stefan Strauf, Ridgewood, NJ (US);
Vikram Arvind Patil, Hoboken, NJ (US);
Eui-Hyeok Yang, Fort Lee, NJ (US);
Stefan Strauf, Ridgewood, NJ (US);
The Trustees of the Stevens Institute of Technology, Hoboken, NJ (US);
Abstract
In a method for adjusting the sensitivity of a photodetector, the bandgap of the photodetection material is adjusted by inducing strain in the photodetection material. Such adjustments can be made in situ and continuously, in a reproducible and repeatable manner. In embodiments of the method, the photodetection material is graphene, carbon nanotubes or graphene nanoribbon. The use of graphene permits a dynamically-adjustable sensitivity over a dynamic range of radiation having wavelengths of 1.38 microns or less, up to at least 60 microns. In an adjustable photodetector, a graphene layer is suspended over a silicon substrate by a layer of an insulating material. Adjusting the voltage across the graphene layer and the silicon substrate induces strain in the graphene layer by electrostatic attraction.