The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Aug. 09, 2010
Applicants:

Keith E. Fogel, Hopewell Junction, NY (US);

William S. Graham, Irvington, NY (US);

Jeehwan Kim, Los Angeles, CA (US);

Harold J. Hovel, Katonah, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Katherine L. Saenger, Ossining, NY (US);

Inventors:

Keith E. Fogel, Hopewell Junction, NY (US);

William S. Graham, Irvington, NY (US);

Jeehwan Kim, Los Angeles, CA (US);

Harold J. Hovel, Katonah, NY (US);

Devendra K. Sadana, Pleasantville, NY (US);

Katherine L. Saenger, Ossining, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/052 (2014.01); H01L 31/0236 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0527 (2013.01); H01L 31/02366 (2013.01); H01L 31/03529 (2013.01); Y02E 10/52 (2013.01);
Abstract

A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.


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