The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
May. 24, 2012
Applicants:
O Seo Park, Hopewell Junction, NY (US);
Wai-kin LI, Poughkeepsie, NY (US);
Inventors:
O Seo Park, Hopewell Junction, NY (US);
Wai-Kin Li, Poughkeepsie, NY (US);
Assignees:
International Business Machines Corporation, Armonk, NY (US);
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); G03F 1/36 (2012.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
H01L 21/31144 (2013.01); H01L 22/12 (2013.01); G03F 1/36 (2013.01); H01L 22/20 (2013.01); G03F 1/144 (2013.01);
Abstract
Methods of manufacturing semiconductor devices and methods of optical proximity correction methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes determining an amount of reactive ion etch (RIE) lag of a RIE process for a material layer of the semiconductor device, and adjusting a size of at least one pattern for a feature of the material layer by an adjustment amount to partially compensate for the amount of RIE lag determined.