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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8877626 B1

PDFFull Text
Date of Patent:
Nov. 04, 2014

Filed:

May. 17, 2013

Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device

Applicants:

Jae-goo Lee, Suwon-si, KR;

Young-woo Park, Seoul, KR;

Byung-kwan You, Seoul, KR;

Dong-sik Lee, Yongin-si, KR;

Sang-yong Park, Seongnam-si, KR;

Inventors:

Jae-goo Lee, Suwon-si, KR;

Young-woo Park, Seoul, KR;

Byung-kwan You, Seoul, KR;

Dong-sik Lee, Yongin-si, KR;

Sang-yong Park, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel Sibley & Sajovec, PA

Primary Examiner:

Victor A Mandala

Assistant Examiner:

Christopher Johnson

Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 27/11582 (2013.01); H01L 27/11565 (2013.01); H01L 27/11578 (2013.01); H01L 29/7926 (2013.01);
Abstract

A nonvolatile memory device includes a substrate, a channel layer protruding from the substrate, a gate conductive layer surrounding the channel layer, a gate insulating layer disposed between the channel layer and the gate conductive layer, and a first insulating layer spaced apart from the channel layer and disposed on the top and bottom of the gate conductive layer. The gate insulating layer extends between the gate conductive layer and the first insulating layer.

Find Patent Forward Citations

Lee, Jae-goo. (2014). Nonvolatile memory device, method of manufacturing the nonvolatile memory device, and memory module and system including the nonvolatile memory device (U.S. Patent No. 8877626). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8877626

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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