The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

Jun. 24, 2010
Applicants:

Darshana N. Bhagat, Framingham, MA (US);

Thomas J. Dunbar, Burlington, VT (US);

Yen LI Lim, Essex Junction, VT (US);

Jed H. Rankin, Richmond, VT (US);

Eva A. Shah, Essex Junction, VT (US);

Inventors:

Darshana N. Bhagat, Framingham, MA (US);

Thomas J. Dunbar, Burlington, VT (US);

Yen Li Lim, Essex Junction, VT (US);

Jed H. Rankin, Richmond, VT (US);

Eva A. Shah, Essex Junction, VT (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26586 (2013.01); H01L 21/823807 (2013.01); H01L 29/7833 (2013.01);
Abstract

a method comprises forming a hardmask over one or more gate structures. The method further comprises forming a photoresist over the hardmask. The method further comprises forming an opening in the photoresist over at least one of the gate structures. The method further comprises stripping the hardmask that is exposed in the opening and which is over the at least one of the gate structures. The method further comprises removing the photoresist. The method further comprises providing a halo implant on a side of the at least one of the gate structures.


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