The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Sep. 14, 2012
Bo-sung Kim, Seoul, KR;
Jun-ho Song, Seongnam-si, KR;
Doo-na Kim, Seongnam-si, KR;
Kang-moon JO, Seoul, KR;
Tae-young Choi, Seoul, KR;
Masataka Kano, Hwaseong-si, KR;
Yeon-taek Jeong, Seoul, KR;
Bo-Sung Kim, Seoul, KR;
Jun-Ho Song, Seongnam-si, KR;
Doo-Na Kim, Seongnam-si, KR;
Kang-Moon Jo, Seoul, KR;
Tae-Young Choi, Seoul, KR;
Masataka Kano, Hwaseong-si, KR;
Yeon-Taek Jeong, Seoul, KR;
Samsung Display Co., Ltd., , KR;
Abstract
In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.