The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
May. 25, 2011
Applicants:
Hyun-sik Seo, Annyang-si, KR;
Nack-bong Choi, Suwon-si, KR;
Inventors:
Hyun-Sik Seo, Annyang-si, KR;
Nack-Bong Choi, Suwon-si, KR;
Assignee:
LG Display Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01); H01L 51/40 (2006.01); H01L 51/10 (2006.01); H01L 51/05 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/105 (2013.01); H01L 51/0545 (2013.01); H01L 51/0052 (2013.01); H01L 51/0011 (2013.01); H01L 51/0516 (2013.01); H01L 51/0059 (2013.01); H01L 51/0036 (2013.01);
Abstract
Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers.