The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jan. 29, 2013
Sanyo Electric Co., Ltd., Moriguchi, JP;
Masato Shigematsu, Osaka, JP;
Koichi Kubo, Kaizuka, JP;
Takahiro Mishima, Kobe, JP;
Yasuko Hirayama, Kobe, JP;
Taiki Hashiguchi, Kaizuka, JP;
Sanyo Electric Co., Ltd., Moriguchi, JP;
Abstract
A manufacturing includes forming an insulating layer covering a portion of a first semiconductor layer on a semiconductor substrate, removing a portion of the first semiconductor layer which is not covered with the insulating layer with an etchant to expose a potion of the first main surface, and cleaning the first main surface using a cleaning liquid containing hydrofluoric acid. An etching rate by the etchant to etch the first semiconductor layer is higher than an etching rate by the etchant to etch a first surface layer of the insulating layer, the first surface layer being on the side opposite to the first semiconductor layer. An etching rate by the cleaning liquid to etch a second surface layer of the insulating layer, the second surface layer being on the first semiconductor layer side, is lower than an etching rate by the cleaning liquid to etch the first surface layer.