The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2014

Filed:

May. 19, 2011
Applicants:

Jianhong Mao, Shanghai, CN;

Deming Tang, Shanghai, CN;

Inventors:

Jianhong Mao, Shanghai, CN;

Deming Tang, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); B81C 1/00 (2006.01); G01P 15/08 (2006.01); H03H 3/007 (2006.01);
U.S. Cl.
CPC ...
B81C 1/0015 (2013.01); G01P 2015/0828 (2013.01); B81B 2207/07 (2013.01); H03H 3/0072 (2013.01); B81C 2201/0109 (2013.01); B81C 1/00293 (2013.01); B81B 2203/0118 (2013.01); B81C 2201/0125 (2013.01); B81C 2203/0145 (2013.01); G01P 15/0802 (2013.01);
Abstract

A method for manufacturing a micro-electro-mechanical system (MEMS) device is provided. The method comprises: providing a semiconductor substrate, the semiconductor substrate having a metal interconnection structure () formed therein; forming a first sacrificial layer () on the surface of the semiconductor substrate, the material of the first sacrificial layer is amorphous carbon; etching the first sacrificial layer to form a first recess (); covering and forming a first dielectric layer () on the surface of the first sacrificial layer; thinning the first dielectric layer by a chemical mechanical polishing (CMP) process, until exposing the first sacrificial layer; forming a micromechanical structure layer () on the surface of the first sacrificial layer and exposing the first sacrificial layer, wherein a part of the micromechanical structure layer is connected to the first dielectric layer. The method avoids polishing the amorphous carbon, shortens the period of production, and improves the production efficiency.


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