The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Mar. 30, 2011
Emmanuel P. Quevy, El Cerito, CA (US);
Carrie W. Low, Union City, CA (US);
Emmanuel P. Quevy, El Cerito, CA (US);
Carrie W. Low, Union City, CA (US);
Silicon Laboratories Inc., Austin, TX (US);
Abstract
A method of manufacturing an integrated circuit including a MEMS device includes forming a structural layer above a substrate including at least one semiconductor device. The method includes forming an attachment to a first portion of the structural layer, the attachment having a thickness substantially greater than a thickness of the structural layer. In at least one embodiment of the method, the attachment is conjoined with the first portion of the structural layer and the first portion of the structural layer and the attachment are operative to mechanically move in unison. In at least one embodiment of the method, forming the attachment includes forming a patterned filler layer of a first material above the structural layer and forming a patterned conformal layer of a second material on the patterned filler layer. The filler layer has a thickness substantially greater than the thickness of the structural layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile