The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Nov. 21, 2012
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventors:
Kyechul Choi, Seoul, KR;
Bong Chul Kim, Daegu, KR;
Chan Ki Ha, Incheon, KR;
Sang Moo Park, Gyeonggi-do, KR;
Assignee:
LG Display Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); H01L 21/02565 (2013.01); H01L 33/005 (2013.01); H01L 21/0262 (2013.01); H01L 21/02554 (2013.01);
Abstract
A method of manufacturing oxide thin film transistor and display device are provided. In the method of manufacturing an oxide thin film transistor, the method includes: forming an active layer of an oxide semiconductor on a substrate, and performing surface treatment with plasma for the active layer to permeate oxygen into the active layer.