The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Oct. 07, 2010
Kiyotoshi Sekiguchi, Osaka, JP;
Sugiko Futaki, Osaka, JP;
Yukimasa Taniguchi, Osaka, JP;
Maria Hayashi, Osaka, JP;
Norio Nakatsuji, Kyoto, JP;
Takamichi Miyazaki, Kyoto, JP;
Eihachiro Kawase, Kyoto, JP;
Hirofumi Suemori, Kyoto, JP;
Kiyotoshi Sekiguchi, Osaka, JP;
Sugiko Futaki, Osaka, JP;
Yukimasa Taniguchi, Osaka, JP;
Maria Hayashi, Osaka, JP;
Norio Nakatsuji, Kyoto, JP;
Takamichi Miyazaki, Kyoto, JP;
Eihachiro Kawase, Kyoto, JP;
Hirofumi Suemori, Kyoto, JP;
Osaka University, Osaka, JP;
Kyoto University, Kyoto, JP;
Abstract
The present invention provides a culture substrate which enables maintenance culture of human pluripotent stem cells in a pluripotent state under a feeder-free culture environment, and a culture method of human pluripotent stem cells using the culture substrate. By seeding human pluripotent stem cells dissociated into single cells at a cell density of 4×10to 10×10cells/cmonto a culture substrate coated with human laminin α5β1γ1 E8 fragment or human laminin α3β3γ2 E8 fragment preferably at a concentration of 0.5 to 25 μg/cm, the human pluripotent stem cells can be rapidly expanded in a pluripotent state.